Diffusion mechanism study of arsenic in SiO/sub 2/ using oxygen isotope /sup 18/O as a component element of matrix SiO/sub 2/

Author

Tsunashima, Y. ; Aoki, N.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

699

Lastpage

702

Abstract

The diffusion mechanism of arsenic (As) in SiO/sub 2/ was studied by the diffusion of oxygen in SiO/sub 2/ using isotope /sup 18/O as a component element of the matrix oxide. The result suggests that As loosens SiO/sub 2/ network bonds and drives a subsequent rearrangement of the network which enhances diffusion of As and oxygen in N/sub 2/ annealing. However, when 10% H/sub 2/ was added to N/sub 2/, As atoms were released from the network in a molecular form and were completely independent of the network rearrangement.

Keywords

X-ray photoelectron spectra; annealing; arsenic; diffusion; secondary ion mass spectra; semiconductor-insulator boundaries; silicon compounds; /sup 18/O; H/sub 2/-N/sub 2/ mixture; N/sub 2/; N/sub 2/ annealing; N/sub 2/-H/sub 2/; SIMS profiles; Si-SiO/sub 2/:As; SiO/sub 2/ network bond loosening; SiO/sub 2/:As; XPS; diffusion enhancement; diffusion mechanism; matrix oxide; network rearrangement; Annealing; Boron; CMOS logic circuits; Chemical elements; Hydrogen; Impurities; Isotopes; Oxygen; Semiconductor process modeling; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650479

Filename

650479