Title :
A low-power ESD-protected 24GHz receiver front-end with π-type input matching network
Author :
Wang, Hongrui ; Jiao, Chao ; Zhang, Li ; Zeng, Dajie ; Yang, Dongxu ; Wang, Yan ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
This paper presents a full ESD-protected receiver front-end for wireless communications around 24GHz, comprising LNA, mixer, VGA, and on-chip balun. A π -type input matching network incorporating ESD capacitance is constructed to realize the source impedance transformation for higher gain. With it, the gain of the first stage is improved while the noise figure is just degraded slightly. The measured results show an input return loss of less than-12dB, 36dB voltage gain, 6.9dB noise figure, and 2dBm output P1dB. The chip has an HBM ESD robustness of ± 2kV and consumes 34mA from a 1.2V supply with a total area of 1×0.8 mm2 using 0.13μm RF CMOS process.
Keywords :
CMOS integrated circuits; baluns; electrostatic discharge; field effect MMIC; low noise amplifiers; low-power electronics; microwave receivers; mixers (circuits); wireless channels; π-type input matching network; ESD capacitance; ESD-protected receiver front-end; HBM ESD robustness; LNA; RF CMOS process; VGA; current 34 mA; frequency 24 GHz; gain 36 dB; low-power receiver front-end; mixer; noise figure 6.9 dB; on-chip balun; size 0.13 mum; source impedance transformation; voltage 1.2 V; wireless communications; Electrostatic discharge; Gain; Impedance matching; Junctions; Noise figure; Radio frequency; Resistance; CMOS; LNA; VGA; electrostatic discharge (ESD);
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
DOI :
10.1109/ISCAS.2011.5938232
