Title :
A novel vertical current limiter fabricated with a deep trench forming technology for highly reliable field emitter arrays
Author :
Takemura, H. ; Tomihari, Y. ; Furutake, N. ; Matsuno, F. ; Yoshiki, M. ; Takada, N. ; Okamoto, A. ; Miyano, S.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
We have developed highly reliable field emitter arrays with a novel vertical current limiter fabricated with a deep trench forming technology. The vertical current limiter has a local current-control function that automatically prevents fatal arc failure, and it has low resistance when used in the normal operation of a field emitter array. It has demonstrated a breakdown voltage as high as 120 V and a negligible increase in operation voltage, i.e., Vg of 70 V at 1 /spl mu/A/tip with an emitter cone density of more than 5/spl times/10/sup 7/ emitters/cm/sup 2/.
Keywords :
arrays; current limiters; semiconductor device reliability; semiconductor technology; vacuum microelectronics; 120 V; 70 V; I-V characteristics; Si; Si substrate; VECTL design; breakdown voltage; deep trench forming technology; emitter cone density; highly reliable field emitter arrays; local current-control function; operation voltage; vertical current limiter fabrication; Current limiters; Displays; Etching; Fabrication; Field emitter arrays; Insulation; Resistors; Semiconductor films; Substrates; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650481