Title :
Enhanced electron emission and its stability from gated Mo-polycide field emitters
Author :
Hyung Soo Uh ; Byung Gook Park ; Jong Duk Lee
Author_Institution :
ISRC, Seoul Nat. Univ., South Korea
Abstract :
Metal silicides are promising materials for field emission cathodes due to their high electrical conductivity and thermal stability. In this paper, we examined molybdenum (Mo) silicide formation on gated n/sup +/ poly-Si emitters to improve electron field emission and stability. Surface morphology and field emission properties of the pure poly-Si emitters and the Mo-silicided poly-Si (Mo-polycide) emitters have been examined and compared. Field emission from the Mo-polycide emitters exhibited significant enhancement in both electron emission efficiency and stability.
Keywords :
current fluctuations; electron field emission; elemental semiconductors; molybdenum compounds; semiconductor device metallisation; silicon; surface topography; thermal stability; vacuum microelectronics; Mo silicide formation; Mo-silicidation; MoSi/sub 2/-Si; Si; electrical conductivity; electron emission efficiency; electron field emission; enhanced electron emission; field emission cathodes; gated n/sup +/ poly-Si emitters; polysilicon field emitters; surface morphology; surface roughness; thermal stability; Electron emission; Fabrication; Oxidation; Silicides; Silicon; Surface contamination; Surface morphology; Surface resistance; Thermal conductivity; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650482
