Title :
Super high frequency width extensional aluminum nitride (AlN) MEMS resonators
Author :
Wojciechowski, K.E. ; Olsson, R.H., III ; Nordquist, C.D. ; Tuck, M.R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Width extensional (WE) super high frequency (SHF) aluminum nitride (AlN) resonators have been fabricated using optical lithography. Solidly anchored WE resonators were shown to be superior to beam anchored resonators of the same size and it was verified that simply scaling resonator area does not improve insertion loss (IL). Resonators with an IL of -6.3 dB into 50 ohms at 4.1 GHz and -7.2 dB at 6.8 GHz have been demonstrated. This type of performance at 6.8 GHz is unprecedented for contour mode resonators and represents a 12.6 dB improvement over recently reported SHF AlN resonators.
Keywords :
aluminium compounds; micromechanical resonators; photolithography; piezoelectric devices; piezoelectric materials; ultrasonic devices; AlN; AlN MEMS resonators; MEMS resonator fabrication; aluminum nitride MEMS resonators; frequency 4.1 GHz; frequency 6.8 GHz; insertion loss improvement; loss 6.3 dB; loss 7.2 dB; optical lithography; resistance 50 ohm; solidly anchored width extensional resonators; super high frequency MEMS resonators; width extensional MEMS resonators; Acoustic beams; Aluminum nitride; Electrodes; Fingers; Frequency; Laboratories; Lithography; Micromechanical devices; Optical losses; Optical resonators; Aluminum Nitride; Microresonator; RF MEMS; SHF MEMS;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441802
