Title :
Read circuits for resistive memory (ReRAM) and memristor-based nonvolatile Logics
Author :
Meng-Fan Chang ; Lee, Albert ; Chien-Chen Lin ; Mon-Shu Ho ; Ping-Cheng Chen ; Chia-Chen Kuo ; Ming-Pin Chen ; Pei-Ling Tseng ; Tzu-Kun Ku ; Chien-Fu Chen ; Kai-Shin Li ; Jia-Min Shieh
Author_Institution :
EE Dept., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
Resistive memory device (Memristor) is one of the candidates for energy-efficient nonvolatile memory and nonvolatile logics (nvLogics) in the applications of wearable devices, Internet of Things (IoT), cloud computing, and big-data processing. However, resistive RAM (ReRAM) and memristor-based nvLogics suffer limited performance and low yield due to process variations in transistors and resistance of memristor. This presentation discusses the design challenges in read circuits for high-speed, area-efficient, and low-voltage ReRAM and nvLogics. Memristor-based nvLogics, such as nonvolatile-SRAM (nvSRAM), nonvolatile flip-flops (nvFF), and nonvolatile TCAM (nvTCAM) are included in this presentation. Several silicon-verified solutions on read scheme and sense amplifiers are also discussed in this presentation.
Keywords :
SRAM chips; amplifiers; flip-flops; low-power electronics; memristor circuits; resistive RAM; Internet of Things; IoT; area-efficient ReRAM; big-data processing; cloud computing; energy-efficient nonvolatile memory; high-speed ReRAM; low-voltage ReRAM; memristor-based nonvolatile logics; memristor-based nvLogics; nonvolatile TCAM; nonvolatile flip-flops; nonvolatile-SRAM; nvFF; nvSRAM; nvTCAM; read circuits; resistive memory device; sense amplifiers; silicon-verified solutions; wearable devices; Computer architecture; Microprocessors; Nonvolatile memory; Random access memory; Resistance; Switches; Transistors;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2015 20th Asia and South Pacific
Conference_Location :
Chiba
Print_ISBN :
978-1-4799-7790-1
DOI :
10.1109/ASPDAC.2015.7059068
