Title :
High-speed, low-power InSb transistors
Author :
Ashley, T. ; Dean, A.B. ; Elliott, C.T. ; Jefferies, R. ; Khaleque, F. ; Phillips, T.J.
Author_Institution :
Defence Evaluation & Res. Agency, Malvern, UK
Abstract :
High-speed, low-power consumption field-effect transistors fabricated from InSb/In/sub 1-x/Al/sub x/Sb are demonstrated. A 0.7 /spl mu/m gate-length enhancement-mode device shows an f/sub T/, of 74 GHz, and an f/sub max/ of 89 GHz, at a drain voltage below 0.5 V. This is the fastest reported transistor for its gate length, as far as is known.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; indium compounds; millimetre wave field effect transistors; 0.5 V; 0.7 micron; 74 GHz; 89 GHz; EHF; InSb-InAlSb; InSb/In/sub 1-x/Al/sub x/Sb FET; MM-wave MOSFET; SiO/sub 2/; enhancement-mode device; field-effect transistors; high-speed operation; low-power InSb transistors; Capacitance; FETs; Fabrication; Gallium arsenide; Indium; Leakage current; Photonic band gap; Power dissipation; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650491
