Unipolar complementary bistable memories using gate-controlled negative differential resistance in a 2D-2D quantum tunneling transistor

We demonstrate a novel quantum device, the double electron layer tunneling transistor (DELTT). The DELTT´s operating principle is based on the gate-control of 2D-2D resonant tunneling between the two electron layers in an AlGaAs-GaAs double quantum well heterostructure. Unlike other quantum transistors, the DELTT does not require small lateral dimensions, but is entirely planar in configuration, enabling ease in fabrication. We demonstrate static memories at 77 K, and unipolar complementary static memories at 1.5 K, using half as many transistors as conventionally required.