Title :
Low-frequency noise and performance of GaN p-n junction photodetectors
Author :
Kuksenkov, D.V. ; Temkin, H. ; Osinsky, A. ; Gaska, R. ; Khan, M.A.
Author_Institution :
Dept. of Electr. Eng., Texas Tech. Univ., Lubbock, TX, USA
Abstract :
We report on low-frequency noise characteristics of visible-blind GaN p-n junction photodetectors. Carrier hopping through defect states in the space charge region, believed to be associated with dislocations, is identified as the main mechanism responsible for the dark conductivity of the photodiodes. The dark current noise has the 1/f character and obeys the Hooge relation with /spl alpha//spl ap/3.
Keywords :
1/f noise; III-V semiconductors; cryogenic electronics; dark conductivity; defect states; dislocations; gallium compounds; negative resistance devices; photodetectors; photodiodes; quantum interference devices; resonant tunnelling transistors; semiconductor device noise; semiconductor quantum wells; semiconductor storage; space charge; ultraviolet detectors5802324; 1/f character; GaN; GaN p-n junction photodetectors; Hooge relation; LF noise characteristics; UV detectors; carrier hopping; dark conductivity; dark current noise; defect states; dislocations; low-frequency noise; space charge region; visible-blind photodetectors; Conductivity; Dark current; Gallium nitride; Low-frequency noise; P-n junctions; Photodetectors; Photodiodes; Schottky barriers; Schottky diodes; Temperature dependence;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650493
