Title :
A degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water
Author :
Aoki, H. ; Yamasaki, S. ; Usami, T. ; Tsuchiya, Y. ; Ito, N. ; Onodera, T. ; Hayashi, Y. ; Ueno, K. ; Gomi, H. ; Aoto, N.
Author_Institution :
ULSI Device Dev. Labs., NEC, Kanagawa, Japan
Abstract :
A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.
Keywords :
copper; Cu; Cu/HSQ damascene technology; TiN; TiN mask; degradation-free technology; electrolytic ionized water; metal mask patterning; photo-resist-mask process; post-CMP cleaning; ultra-pure cathode water; Cathodes; Chemicals; Cleaning; Copper; Degradation; Dielectric constant; Etching; Laboratories; Plasma applications; Plasma chemistry;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650497
