Title :
A highly reliable self-planarizing low-k intermetal dielectric for sub-quarter micron interconnects
Author :
Matsuura, M. ; Tottori, I. ; Goto, K. ; Maekawa, K. ; Mashiko, Y. ; Hirayama, M.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
In this paper we present a highly reliable IMD process using a new CVD chemistry. The key to the process is a unique gas chemistry of methylsilane and hydrogen peroxide, resulting in excellent gapfill and planarity with low-k of 2.75. Via-chain resistances using this process are just as low and stable as those using inorganic IMDs. This is likely attributable to the smaller amount of water outgassing with this process.
Keywords :
chemical vapour deposition; dielectric thin films; integrated circuit interconnections; permittivity; 0.25 micron; CVD; HMO; gapfill; gas chemistry; hydrogen peroxide; methylsilane; organic IMD; planarity; reliability; self-planarizing low-k intermetal dielectric; sub-quarter micron interconnect; via-chain resistance; water outgassing; Chemistry; Dielectric constant; Dielectric materials; Geometry; Laboratories; Metallization; Organic materials; Plugs; Polymer films; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650499
