Title :
Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules
Author :
Elasser, Ahmed ; Agamy, Mohammed ; Nasadoski, Jeffrey ; Bolotnikov, Alexander ; Stum, Zachary ; Raju, Ravi ; Stevanovic, Ljubisa ; Mari, Jorge ; Menzel, Matthias ; Bastien, Bertrand ; Losee, Peter
Author_Institution :
GE Global Res. Center, Niskayuna, NY, USA
Abstract :
High voltage and high current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6×6mm2 SiC chips that are fabricated on 3" SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high voltage, high frequency applications, as well as antiparallel diodes for 6.5kV IGBTs, IGCTs, and IEGTs.
Keywords :
modules; p-i-n diodes; power semiconductor devices; semiconductor device packaging; semiconductor device testing; silicon compounds; wide band gap semiconductors; ISOPLUS package; SiC; bipolar pin diode modules; current 100 A; dynamic characterization; static characterization; switching tests; voltage 6.5 kV; Insulated gate bipolar transistors; Leakage current; PIN photodiodes; Schottky diodes; Silicon; Silicon carbide; Switches; Bipolar Degradation; Bipolar Diodes; Current Sharing; High Voltage; PiN; Silicon Carbide;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342485
