Title :
Thermal behavior of IGBT subjected to short power pulses of high amplitude
Author :
Rouve, L.L. ; Schaeffer, C. ; Farjah, E.
Author_Institution :
Lab. d´´Electrotech. de Grenoble, France
Abstract :
During operation, IGBT power switches can be subjected to destructive short power pulses of high amplitude. The aim of this paper is to study the IGBT´s thermal behavior due to such stresses. Thus, a thermal model is developed and then simulations and experimental results are compared. Also an analytical approach is described and first results about short-circuits are presented
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor switches; short-circuit currents; thermal analysis; IGBT power switches; destructive short power pulses; high amplitude power pulses; stresses; thermal behavior; Bipolar transistors; Insulated gate bipolar transistors; Integrated circuit modeling; Intrusion detection; MOSFET circuits; Temperature; Thermal conductivity; Thermal resistance; Thermal stresses; Threshold voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-1456-5
DOI :
10.1109/APEC.1994.316359
