DocumentCode :
2000819
Title :
Study of dielectric parameters of polyvinyl fluoride (PVF) by the thermostimulated currents (TSC) method
Author :
Khemici, M.W. ; Doulache, N. ; Gourari, A. ; Bendaoud, Mohamed
Author_Institution :
Phys. Dept., M´Hamed Bougara Univ., Boumerdès, Algeria
fYear :
2010
fDate :
4-9 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
The thermally stimulated current method (TSC) is used to study the relaxation modes of the semicrystalline polyvinyle fluoride (PVF) polymer with a temperature that ranges (from -100°C to +100°C). The obtained spectrum shows three peaks as the temperature reaches -40°C, -1°C and +50°C. The shown peak at +50°C corresponds to the dielectric manifestation of the glass transition phenomenon and the peak at 0°C is attributed to the relaxation of H2O molecules, trapped in the sample. Finally, we have attributed the peak which corresponds to around -40°C to the β relaxation of the material. The thermal windowing method enables us to evaluate the activation enthalpy and the relaxation times. The area under each elementary peak allows us to calculate the relative dielectric dispersion. Knowing this later and the relaxation time τ(T) enables us deducing experimentally the real and the imaginary part of the dielectric permittivity ε* for each temperature T and at an equivalent frequency in TSC (f = 10-3Hz). The Cole and Cole diagrams are then deduced.
Keywords :
dielectric relaxation; enthalpy; glass transition; permittivity; polymers; thermally stimulated currents; β relaxation; Cole-Cole diagrams; activation enthalpy; dielectric dispersion; dielectric parameters; dielectric permittivity; equivalent frequency; glass transition; polyvinyl fluoride; relaxation mode; semicrystalline polyvinyle fluoride polymer; thermal windowing method; thermostimulated currents method; Current measurement; Dielectrics; Glass; Permittivity; Polymers; Temperature measurement; PVF; TSC; dielectric permittivity; dielectrics relaxation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on
Conference_Location :
Potsdam
Print_ISBN :
978-1-4244-7945-0
Electronic_ISBN :
978-1-4244-7943-6
Type :
conf
DOI :
10.1109/ICSD.2010.5567937
Filename :
5567937
Link To Document :
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