Title :
Switching voltage transient protection schemes for high current IGBT modules
Author :
Chokhawala, Rahul ; Sobhani, Saed
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
The emergence of high current and faster switching IGBT modules has made it imperative for the designers to look at ways of protecting these devices against detrimental switching voltage transients that are a common side effect of these efficient transistors. This paper discusses protection criteria for both normal switching operation and short circuit operation and covers, in detail, some of the protection schemes designed to address these problems
Keywords :
insulated gate bipolar transistors; overvoltage protection; power transistors; semiconductor switches; switching circuits; transients; IGBT; faults; overvoltage; power transistors; protection criteria; short circuit operation; switching voltage transients; Capacitors; Circuit faults; Clamps; Fault currents; Inductance; Insulated gate bipolar transistors; Protection; Semiconductor optical amplifiers; Switching circuits; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-1456-5
DOI :
10.1109/APEC.1994.316363
