DocumentCode
2000861
Title
Switching voltage transient protection schemes for high current IGBT modules
Author
Chokhawala, Rahul ; Sobhani, Saed
Author_Institution
Int. Rectifier Corp., El Segundo, CA, USA
fYear
1994
fDate
13-17 Feb 1994
Firstpage
459
Abstract
The emergence of high current and faster switching IGBT modules has made it imperative for the designers to look at ways of protecting these devices against detrimental switching voltage transients that are a common side effect of these efficient transistors. This paper discusses protection criteria for both normal switching operation and short circuit operation and covers, in detail, some of the protection schemes designed to address these problems
Keywords
insulated gate bipolar transistors; overvoltage protection; power transistors; semiconductor switches; switching circuits; transients; IGBT; faults; overvoltage; power transistors; protection criteria; short circuit operation; switching voltage transients; Capacitors; Circuit faults; Clamps; Fault currents; Inductance; Insulated gate bipolar transistors; Protection; Semiconductor optical amplifiers; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual
Conference_Location
Orlando, FL
Print_ISBN
0-7803-1456-5
Type
conf
DOI
10.1109/APEC.1994.316363
Filename
316363
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