مرکز منطقه ای اطلاع رساني علوم و فناوري - A Study Of ESD Protection Devices For Input Pins Discharge Characteristics Of Diode, Lateral Bipolar Transistor And Thyristor Under Mm And Hbm Tests

DocumentCode :

2001111

Title :

A Study Of ESD Protection Devices For Input Pins Discharge Characteristics Of Diode, Lateral Bipolar Transistor And Thyristor Under Mm And Hbm Tests

Author :

Ishizuka, Hiroyasu ; Okuyama, Kousuke ; Kubota, Katsuhiko ; Komuro, Masamichi ; Hara, Yuuji

Author_Institution :

Hitachi Microcomputer System

fYear :

1997

fDate :

25-25 Sept. 1997

Firstpage :

255

Lastpage :

262

Keywords :

Biological system modeling; Bipolar transistors; Diodes; Electrostatic discharge; Energy consumption; MOSFETs; Pins; Protection; Stress; Thyristors;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings

Conference_Location :

Orlando, FL, USA

Print_ISBN :

1-878303-69-4

Type :

conf

DOI :

10.1109/EOSESD.1997.634250

Filename :

634250

Link To Document :