Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies

Author

Greenberg, D.R. ; Rivier, M. ; Girard, P. ; Bergeault, E. ; Moniz, J. ; Ahlgren, D. ; Freeman, G. ; Subbanna, S. ; Jeng, S.J. ; Stein, K. ; Nguyen-Ngoc, D. ; Schonenberg, K. ; Malinowski, J. ; Colavito, D. ; Harame, D.L. ; Meyerson, B.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

799

Lastpage

802

Abstract

To address the needs of 3 V wireless components such as power amplifiers, we have added a new, high-breakdown (6 V) HBT to IBM´s 200 mm SiGe technology and explore the large-signal performance for the first time. At 0.9 GHz and 1.8 GHz, we observe excellent power densities of up to 1.36 mW//spl mu/m/sup 2/, outstanding PAE reaching 70% and no performance degradation in integrating the HBT with CMOS.

Keywords

Ge-Si alloys; UHF bipolar transistors; electric breakdown; heterojunction bipolar transistors; power bipolar transistors; semiconductor epitaxial layers; semiconductor materials; 0.9 GHz; 1.8 GHz; 200 mm; 6 V; 70 percent; PAE; SiGe; breakdown voltage; graded epi-base SiGe HBT; large-signal performance; power amplifier; power density; wireless component; BiCMOS integrated circuits; CMOS technology; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Libraries; Silicon germanium; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650502

Filename

650502