Title :
A 3.0-GHz low-power multi-modulus prescaler
Author :
Naber, J.F. ; Singh, H.P. ; Sadler, R.A. ; Laitusis, J.E. ; Tanis, W.J.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
Abstract :
A custom 3.0-GHz, low-power GaAs divide-by-4/5/6/7 prescaler with the highest reported frequency and lowest speed-power product for any high-speed GaAs or silicon multi-modulus prescaler is presented. A speed-power product of 30 pJ has been obtained at 3.0 GHz, with V DD=2.2 V. The best on-wafer full functional yield was 73%
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated logic circuits; scaling circuits; 3 GHz; DCFL; GaAs; MESFET; digital IC; direct coupled FET logic; low-power; multi-modulus prescaler; multimodulus type; Clocks; Counting circuits; FETs; Flip-flops; Frequency synthesizers; Gallium arsenide; Logic design; Logic gates; Output feedback; Silicon;
Conference_Titel :
Circuits and Systems, 1989., Proceedings of the 32nd Midwest Symposium on
Conference_Location :
Champaign, IL
DOI :
10.1109/MWSCAS.1989.102081
