Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method

In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 ¿·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.