Title :
The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin
Author :
Osten, H.J. ; Lippert, G. ; Knoll, D. ; Barth, R. ; Heinemann, B. ; Rucker, H. ; Schley, P.
Author_Institution :
Inst. for Semicond. Phys., Frankfurt, Germany
Abstract :
We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak f/sub T//f/sub max/ values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; 15 ps; 65 GHz; 75 GHz; DC performance; SiGe heterobipolar transistor; SiGe:C; carbon incorporation; cut off frequency; delay time; epitaxial layer; high-frequency characteristics; maximum frequency; molecular beam epitaxy; process margin; ring oscillator; Annealing; Boron; Carbon dioxide; Delay; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Ring oscillators; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650503
