The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin

Author

Osten, H.J. ; Lippert, G. ; Knoll, D. ; Barth, R. ; Heinemann, B. ; Rucker, H. ; Schley, P.

Author_Institution

Inst. for Semicond. Phys., Frankfurt, Germany

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

803

Lastpage

806

Abstract

We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak f/sub T//f/sub max/ values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; 15 ps; 65 GHz; 75 GHz; DC performance; SiGe heterobipolar transistor; SiGe:C; carbon incorporation; cut off frequency; delay time; epitaxial layer; high-frequency characteristics; maximum frequency; molecular beam epitaxy; process margin; ring oscillator; Annealing; Boron; Carbon dioxide; Delay; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Ring oscillators; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650503

Filename

650503