DocumentCode
2001576
Title
A 54 GHz f/sub max/ implanted base 0.35 /spl mu/m single-polysilicon bipolar technology
Author
Niel, S. ; Rozeau, O. ; Ailloud, L. ; Hernandez, C. ; Llinares, P. ; Guillermet, M. ; Kirtsch, J. ; Monroy, A. ; de Pontcharra, J. ; Auvert, G. ; Blanchard, B. ; Mouis, M. ; Vincent, G. ; Chantre, A.
Author_Institution
CNET, Meylan, France
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
807
Lastpage
810
Abstract
We report the fabrication of high performance single-polysilicon npn bipolar transistors using a low cost 200 mm 0.35 /spl mu/m bipolar technology. The devices feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz respectively, comparable to state-of-the-art results from more complex double-polysilicon bipolar processes.
Keywords
VLSI; bipolar integrated circuits; elemental semiconductors; silicon; 0.35 micron; 200 mm; 35 GHz; 54 GHz; cut-off frequency; high-speed technology; implanted base technology; npn bipolar transistors; oscillation frequency; quasi-self-aligned structure; single-polysilicon bipolar technology; Bipolar transistors; Context; Costs; Cutoff frequency; Fabrication; Germanium silicon alloys; Manufacturing; Robustness; Silicon germanium; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650504
Filename
650504
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