Author :
Niel, S. ; Rozeau, O. ; Ailloud, L. ; Hernandez, C. ; Llinares, P. ; Guillermet, M. ; Kirtsch, J. ; Monroy, A. ; de Pontcharra, J. ; Auvert, G. ; Blanchard, B. ; Mouis, M. ; Vincent, G. ; Chantre, A.
Abstract :
We report the fabrication of high performance single-polysilicon npn bipolar transistors using a low cost 200 mm 0.35 /spl mu/m bipolar technology. The devices feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz respectively, comparable to state-of-the-art results from more complex double-polysilicon bipolar processes.
Keywords :
VLSI; bipolar integrated circuits; elemental semiconductors; silicon; 0.35 micron; 200 mm; 35 GHz; 54 GHz; cut-off frequency; high-speed technology; implanted base technology; npn bipolar transistors; oscillation frequency; quasi-self-aligned structure; single-polysilicon bipolar technology; Bipolar transistors; Context; Costs; Cutoff frequency; Fabrication; Germanium silicon alloys; Manufacturing; Robustness; Silicon germanium; Wireless communication;
