1200V SiC MOSFETS for high voltage power conversion

Author

Wu, Tao ; Chen, Jifeng ; Mao, Saijun ; Schutten, Michael J.

Author_Institution

Power Conversion Circuits Lab., GE Global Res. Center, Shanghai, China

fYear

2012

fDate

15-20 Sept. 2012

Firstpage

2921

Lastpage

2926

Abstract

Recently, development and progress in information and telecommunications industry and service have gradually made significant increase in power consumption of Information and communication technology (ICT) equipment. To provide an energy-saving, floor space saving system solution for the data center or telecommunications, there exhibits a new trend moving towards high voltage power conversion. This paper presents a high voltage DC distribution power conversion using SiC MOSFET aiming at improving conversion efficiency. The characterization of SiC MOSFET is tested with double pulse and phase leg tests. A 5kW 380V DC rectifier is built and experimentally tested to compare the efficiency against the same prototype with Si device to demonstrate efficiency benefits.

Keywords

DC-DC power convertors; computer centres; information technology; power MOSFET; rectifiers; silicon compounds; wide band gap semiconductors; DC rectifier; MOSFET; SiC; conversion efficiency; data center; double pulse tests; floor space saving system solution; high voltage DC distribution power conversion; information and communication technology equipment; phase leg tests; power 5 kW; power consumption; voltage 1200 V; voltage 380 V; Insulated gate bipolar transistors; Logic gates; MOSFETs; Power conversion; Rectifiers; Silicon; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2012 IEEE

Conference_Location

Raleigh, NC

Print_ISBN

978-1-4673-0802-1

Electronic_ISBN

978-1-4673-0801-4

Type

conf

DOI

10.1109/ECCE.2012.6342523

Filename

6342523