Title :
1200V SiC MOSFETS for high voltage power conversion
Author :
Wu, Tao ; Chen, Jifeng ; Mao, Saijun ; Schutten, Michael J.
Author_Institution :
Power Conversion Circuits Lab., GE Global Res. Center, Shanghai, China
Abstract :
Recently, development and progress in information and telecommunications industry and service have gradually made significant increase in power consumption of Information and communication technology (ICT) equipment. To provide an energy-saving, floor space saving system solution for the data center or telecommunications, there exhibits a new trend moving towards high voltage power conversion. This paper presents a high voltage DC distribution power conversion using SiC MOSFET aiming at improving conversion efficiency. The characterization of SiC MOSFET is tested with double pulse and phase leg tests. A 5kW 380V DC rectifier is built and experimentally tested to compare the efficiency against the same prototype with Si device to demonstrate efficiency benefits.
Keywords :
DC-DC power convertors; computer centres; information technology; power MOSFET; rectifiers; silicon compounds; wide band gap semiconductors; DC rectifier; MOSFET; SiC; conversion efficiency; data center; double pulse tests; floor space saving system solution; high voltage DC distribution power conversion; information and communication technology equipment; phase leg tests; power 5 kW; power consumption; voltage 1200 V; voltage 380 V; Insulated gate bipolar transistors; Logic gates; MOSFETs; Power conversion; Rectifiers; Silicon; Silicon carbide;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342523
