DocumentCode :
2001773
Title :
Photochemical Growth Of Gallium Nitride And Aluminum Nitride On Sapphire (0001) And GaAs
Author :
John, P.C. ; Alwan, J.J. ; Eden, J.G.
Author_Institution :
University of Illinois
fYear :
1992
fDate :
16-19 Nov 1992
Firstpage :
152
Lastpage :
153
Keywords :
Aluminum gallium nitride; Aluminum nitride; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Optical films; Optical pulses; Photochemistry; Semiconductor films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS '92, Conference Proceedings. IEEE Lasers and Electro-Optics Society, 1992 Annual Meeting
Print_ISBN :
0-7803-0526-4
Type :
conf
DOI :
10.1109/LEOS.1992.693889
Filename :
693889
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2001773
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