DocumentCode :
2001777
Title :
An accurate, low impedance, low dropout sub-V bandgap reference
Author :
Kin Keung Lau
Author_Institution :
HandHeld Power Design, Maxim Integrated, San Jose, CA, USA
fYear :
2013
fDate :
11-12 July 2013
Firstpage :
1
Lastpage :
4
Abstract :
A compact, accurate sub-1V low impedance, low dropout bandgap reference is presented in this paper. Firstly, a new 1V bandgap core (corel) is introduced by the simple addition of two resistors to the generic core. Using this concept, an improved version (core 2) is presented to generate a sub-1V(0.9V in the design example) bandgap reference that can be set from a bit above Vbe, up to the normal bandgap voltage. Both cores are in low dropout and low output impedance configurations. The circuit idea is realized in 90nm BiCMOS technology. Simulation results show that over a 200oC temperature range, core 1 can achieve 20ppm over line and load regulation. Core 2 can achieve 15ppm over line and load regulation. Both cores can be realized in a CMOS process using parasitic PNP devices.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; energy gap; reference circuits; resistors; BiCMOS technology; bandgap core; line regulation; load regulation; low dropout bandgap reference; normal bandgap voltage; parasitic PNP devices; resistors; size 90 nm; sub-1V low impedance bandgap reference; voltage 0.9 V; Accuracy; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; Photonic band gap; Resistors; Simulation; Sub-1V; low dropout; voltage reference;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signals, Circuits and Systems (ISSCS), 2013 International Symposium on
Conference_Location :
Iasi
Print_ISBN :
978-1-4799-3193-4
Type :
conf
DOI :
10.1109/ISSCS.2013.6651183
Filename :
6651183
Link To Document :
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