Title :
A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide Dynamic Range
Author :
Cazaux, Jean-Louis ; Pavlidis, Dimitris ; Ng, Geok-Ing ; Tutt, Marcel
Author_Institution :
Center for High Frequency Microelectronics, Solid State Electronics Laboratory, Dept. of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI. USA 48109-2122; The University of Michigan; Alcatel Espace, 31037 Toulouse, Fr
Abstract :
Double Channel HEMT´s are used as variable resistor elements in a bridged-T attenuator with broadband characteristics (0.5-12GHz), and wide dynamic range (12-16dB). A small insertion loss (2.8dB minimum) is obtained with the help of the heterojunction approach which results in smaller ON-channel resistances than MESFET technology.
Keywords :
Attenuation; Attenuators; Capacitance; Circuits; Dynamic range; FETs; HEMTs; Heterojunctions; Insertion loss; MESFETs;
Conference_Titel :
Microwave Conference, 1988. 18th European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1988.333940
