• DocumentCode
    2001800
  • Title

    The Use of Double Heterojunction Diodes in Monolithic Phase Shifters

  • Author

    Cazaux, Jean-Louis ; Pavlidis, Dimitris ; Ng, Geok-Ing ; Tutt, Marcel

  • Author_Institution
    Alcatel Espace, 31037 Toulouse, France.
  • fYear
    1988
  • fDate
    12-15 Sept. 1988
  • Firstpage
    1005
  • Lastpage
    1010
  • Abstract
    Double Heterojunction Diodes are studied theoretically and experimentally and show improved capacitance ratios typically of the order of 7 over MESFET technology. A monolithic T-phase shifter has been built using this approach and good phase shift characteristics (¿¿= 55 degrees, insertion loss = 2 dB, VSWR¿ 1.8) has been demonstrated experimentally at 6 GHz. The design sensitivity on material parameters is presented and the relative merits of the heterostructure approach for monolithic applications are discussed.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; DH-HEMTs; Gallium arsenide; HEMTs; Heterojunctions; MESFETs; Phase shifters; Schottky diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1988. 18th European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • DOI
    10.1109/EUMA.1988.333941
  • Filename
    4132629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2001800