The Use of Double Heterojunction Diodes in Monolithic Phase Shifters

Double Heterojunction Diodes are studied theoretically and experimentally and show improved capacitance ratios typically of the order of 7 over MESFET technology. A monolithic T-phase shifter has been built using this approach and good phase shift characteristics (¿¿= 55 degrees, insertion loss = 2 dB, VSWR¿ 1.8) has been demonstrated experimentally at 6 GHz. The design sensitivity on material parameters is presented and the relative merits of the heterostructure approach for monolithic applications are discussed.