• DocumentCode
    2002263
  • Title

    Fluorinated cellular polypropylene films with time-invariant deep charge traps obtained by post-treatments

  • Author

    Mao, Mingjun ; An, Zhenlian ; Yao, Junlan ; Zhang, Yewen ; Xia, Zhongfu

  • Author_Institution
    Shanghai Key Lab. of Special Artificial Microstructure Mater. & Technol., Tongji Univ., Shanghai, China
  • fYear
    2010
  • fDate
    4-9 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Time-dependent change in charge trap of fluorinated cellular polypropylene (PP) films exposed to air is found by thermally stimulated discharge current measurements. It is clarified that the change is due to a trace of oxygen in the reactive gas mixture, which leads to the formations of peroxy RO2* radicals as well as C=O-containing groups in fluorination as indicated by attenuated total reflection infrared analyses. However, time-invariant charge traps of fluorinated PP films can be formed by the post-treatment of fluorinated PP films with nitrous oxide which can effectively terminate the peroxy RO2* radicals. And the combined post-treatments of the fluorinated films with nitrous oxide and by isothermal crystallization generate the time-invariant deep charge traps.
  • Keywords
    attenuated total reflection; crystallisation; discharges (electric); electrets; infrared spectra; piezoelectric materials; polymer films; attenuated total reflection infrared analyses; electret properties; fluorinated cellular polypropylene films; isothermal crystallization; post-treatments; reactive gas mixture; thermally stimulated discharge current measurements; time-invariant deep charge traps; Crystallization; Current measurement; Films; Isothermal processes; Plastics; Reflection; Thermal stability; Cellular polypropylene film; charge traps; fluorination; isothermal crystallization; nitrous oxide treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on
  • Conference_Location
    Potsdam
  • Print_ISBN
    978-1-4244-7945-0
  • Electronic_ISBN
    978-1-4244-7943-6
  • Type

    conf

  • DOI
    10.1109/ICSD.2010.5568007
  • Filename
    5568007