Title :
An acoustic waveguide using doubly-bonded silicon/thinned PPT/silicon structures for RF applications
Author :
Bassignot, F. ; Courjon, E. ; Ulliac, G. ; Laroche, T. ; Garcia, J. ; Queste, S. ; Romand, J.-P. ; Ballandras, S. ; Petit, R.
Author_Institution :
Inst. FEMTO-ST, UFC-ENSMM-UTBM, Besancon, France
Abstract :
In this paper, we present new results on the development of piezoelectric transducers based on periodically poled ferroelectric domains in a lithium niobate plate bonded between two silicon wafers. The fabrication of the periodically poled transducers operating in the range 50-500 MHz has been achieved on a 3 inches 500 ¿m thick wafer. These devices then have been bonded on silicon wafers to fabricate a waveguide. Guided elliptic as well as partially guided longitudinal modes are excited. The experimental responses of the tested devices are compared to predicted harmonic admittances, showing a good agreement between both results and allowing for a reliable analysis of the nature of the excited modes. We also show interesting studies of material combinations used to guide ultrasonic waves. Dispersion properties have also been studied for a structure Si/PPT/Si. Operating points corresponding to a specific thickness/period ratio are found. Therefore a new conception with a Si/thinned PPT/Si structure is fabricated.
Keywords :
acoustic waveguides; ferroelectric devices; ferroelectric materials; lithium compounds; piezoelectric materials; piezoelectric transducers; silicon; surface acoustic wave resonators; surface acoustic waves; ultrasonic transducers; RF applications; Si-LiNbO3-Si; acoustic waveguide; doubly bonded silicon; frequency 50 MHz to 500 MHz; guided elliptic modes; harmonic admittance; lithium niobate plate; partially guided longitudinal modes; periodically poled ferroelectric domains; piezoelectric transducers; silicon wafers; silicon-PPT-silicon structures; thinned PPT; waveguide fabrication; Acoustic applications; Acoustic waveguides; Acoustic waves; Fabrication; Ferroelectric materials; Lithium niobate; Piezoelectric transducers; Radio frequency; Silicon; Wafer bonding; FEA-BEAM; Periodically poled Lithium Niobate; component; dispersion behaviour; isolated wave; waveguide;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441895