DocumentCode :
2002422
Title :
Two-Dimensional Analysis of Slow-Wave Propagation in Submicronic MESFET
Author :
Benghalia, A. ; Bajon, V. ; Baudrand, H.
Author_Institution :
Laboratoire de microonade E.N¿.S.E.E.I.H.T.; 2, rue C. Camichel, 31071 TOULOUSE - FRANCE.
fYear :
1988
fDate :
12-15 Sept. 1988
Firstpage :
1163
Lastpage :
1168
Abstract :
An accurate two-dimensional analysis for the determination of depletion layer profile using Green´s functions in MESFET has been done. Then a small-signal approach to obtain the inter-electrode impedance is presented which permits the study of the slow-wave propagation in the structure. The results are compared with those of quasi-static approach. The Green´s function used in this work involves the boundary conditions on drain and source electrodes and is obtained by a conformal mapping. Thus the computation time is considerably reduced.
Keywords :
Equations; Impedance; MESFETs; MOSFET circuits; Network address translation; Silicon compounds; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1988. 18th European
Conference_Location :
Stockholm, Sweden
Type :
conf
DOI :
10.1109/EUMA.1988.333966
Filename :
4132654
Link To Document :
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