Title :
A Time-Domain Large-Signal Analysis of GaAs MESFET Devices Incorporating Frequency-Domain Expression for Termination Voltages (Voltage Substitution Method)
Author_Institution :
NTT Radio Communication Systems Laboratories, 1-2356 Take, Yokosuka-shi, Kanagawa-ken, 238-03 Japan
Abstract :
A nonlinear large-signal analysis is proposed, in which different impedances are connected to the external circuits for different frequencies. Analysis of the performance characteristics of frequency doublers, high-efficiency amplifiers, and degenerate amplifiers using GaAs MESFET´s is shown.
Keywords :
Circuits; Differential equations; FETs; Frequency domain analysis; Gallium arsenide; Impedance; MESFETs; Power harmonic filters; Time domain analysis; Voltage;
Conference_Titel :
Microwave Conference, 1988. 18th European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1988.333968
