An analytical AlGaAs MODFET charge control model for computer aided design applications

Author

Syu, T.L. ; Abdel-motaleb, Ibrahim M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

fYear

1989

fDate

14-16 Aug 1989

Firstpage

1263

Abstract

An analytical charge control model for AlGaAs MODFETs is developed. The model has two regions: linear, represented by a linear correspondence, and saturation, represented by an exponential function. A DC model for the device I-V characteristics is developed. The parasitic current from the doped layer of the channel is considered. The velocity saturation of the charges is accounted for, and the saturation drain-source voltage is accurately determined. This model can provide accuracy without sacrificing simplicity. The model has been successfully implemented in SPICE program

Keywords

III-V semiconductors; aluminium compounds; circuit CAD; gallium arsenide; high electron mobility transistors; semiconductor device models; AlGaAs; CAD applications; DC model; I-V characteristics; MODFET; SPICE program; charge control model; computer aided design; parasitic current; saturation drain-source voltage; velocity saturation; Analytical models; Application software; Computer applications; Equations; HEMTs; Linear approximation; MODFETs; SPICE; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1989., Proceedings of the 32nd Midwest Symposium on

Conference_Location

Champaign, IL

Type

conf

DOI

10.1109/MWSCAS.1989.102086

Filename

102086