Title :
High electromechanical coupling coefficient SAW resonator on Ta2O5/Al/LinbO3 structure for wide duplex gap application
Author :
Nakanishi, H. ; Nakamura, H. ; Goto, R.
Author_Institution :
Corp. Components Dev. Center, Panasonic Electron. Devices Co., Ltd., Osaka, Japan
Abstract :
This paper describes the development of high electromechanical coupling coefficient (K2) SAW resonator on a Ta2O5/Al/LiNbO3 structure for wide duplex gap application. We have cleared that the optimum Ta2O5 thickness which the high performance SAW resonator without Rayleigh-mode spurious response could be realized. Also, the Ta2O5 film has an advantage of decreasing the film thickness compared with SiO2 film. The developed SAW resonator shows the excellent performances which are low insertion loss, high attenuation, and high K2 of 23%. So, we have exhibited the possibility of Ta2O5/Al/5°YX-LiNbO3 structure for wide duplex gap application as the alternatives to the SiO2/Al/5°YX-LiNbO3 structure. And, the SAW resonator has the possibility to apply to Band IV duplexer.
Keywords :
acoustic wave absorption; aluminium; lithium compounds; surface acoustic wave resonators; tantalum compounds; Band IV duplexer; Rayleigh mode spurious response; SAW resonator; Ta2O5-Al-LiNbO3; attenuation; electromechanical coupling coefficient; film thickness; insertion loss; wide duplex gap application; 3G mobile communication; Attenuation; Electrodes; Insertion loss; Performance loss; Resonance; Resonant frequency; Shape control; Substrates; Surface acoustic waves; Rayleigh-mode spurious response; SAW resonator; Ta2O5/Al/LiNbO3 structure; high electromechanical coupling coefficient;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441913