• DocumentCode
    2003029
  • Title

    Dielectric behaviour of BaTiO3 / P (VDF-HFP) composite thin films prepared by solvent evaporation method

  • Author

    Aldas, M. ; Boiteux, G. ; Seytre, G. ; Ghallabi, Z.

  • Author_Institution
    CNRS, Univ. Lyon 1, Villeurbanne, France
  • fYear
    2010
  • fDate
    4-9 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This work deals with the study of the molecular mobility as well as the evolution of the permittivity in P(VDF-HFP)/BaTiO3 composites. The composite thin films of P(VDF-HFP) with BaTiO3 (0%, 3.5% and 7.2% by v/v%) were prepared by solvent evaporation method. In addition a sample of 11.8% in volume fraction of X7R “temperature stable” formulations was prepared in order to compare the behaviour of both ceramics. In dielectric study, three relaxation processes are identified corresponding to the ß, αc and ionic relaxations in the temperature range -70 °C/130 °C. The incorporation of fillers does not modify the relaxations of P(VDF-HFP) copolymer, nevertheless fillers increase the permittivity of the composites in accordance with the theoretical model for organic/inorganic medium.
  • Keywords
    barium compounds; ceramics; dielectric relaxation; dielectric thin films; evaporation; filled polymers; permittivity; polymer blends; solvents (industrial); titanium; BaTiO3; P(VDF-HFP) composite thin film; ceramics; copolymer; dielectric behaviour; filler; ionic relaxation; molecular mobility; permittivity; relaxation process; solvent evaporation; temperature -70 C to 130 C; temperature stable formulation; volume fraction; Ceramics; Dielectrics; Films; Permittivity; Plastics; Solvents; BaTiO3 / P(VDF-HFP); composite; dielectric behaviour; solvent evaporation process;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on
  • Conference_Location
    Potsdam
  • Print_ISBN
    978-1-4244-7945-0
  • Electronic_ISBN
    978-1-4244-7943-6
  • Type

    conf

  • DOI
    10.1109/ICSD.2010.5568042
  • Filename
    5568042