DocumentCode :
2003121
Title :
High Efficiency Pulsed GaAs-Pin-Diodes at Millimetre-Wave Frequencies
Author :
Huber, S.
Author_Institution :
Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universitÿt Mÿnchen, Arcisstr. 21, 8000 Mÿnchen 2
fYear :
1989
fDate :
4-7 Sept. 1989
Firstpage :
211
Lastpage :
218
Abstract :
MBE-material is used to fabricate GaAs PIN avalanche-diodes for millimetre-wave applications. The rf-measurements are carried out under pulsed condition. Maximum output power of 15 W and maximum efficiency of 11.1% could be realized at V-band frequencies.
Keywords :
Breakdown voltage; Diodes; Doping; Fabrication; Frequency; Gallium arsenide; Gold; Impedance; Oscillators; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
Type :
conf
DOI :
10.1109/EUMA.1989.334163
Filename :
4132687
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2003121
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