DocumentCode
2003138
Title
Heavy ion sensitivity of a SRAM in SOI bulk-like technology
Author
Ferlet-Cavrois, V. ; Musseau, O. ; Leray, J.L. ; Coïc, Y.M. ; Pelloie, J.L.
Author_Institution
CEA Centre de Bruyeres-le-Chatel, France
fYear
1993
fDate
13-16 Sep 1993
Firstpage
571
Lastpage
576
Abstract
The sensitivity to heavy ions of a thick SOI technology compatible with bulk design rules is studied in this paper. A model is built, relying on two basic phenomena gathered in this thick SOI technology: the collection of the charge injected by the incident ion and its amplification by the parasitic bipolar. Theoretical results are then compared with experimental ones. The oblique incidence induces a sharp increase of the sensitivity of the device
Keywords
CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; semiconductor-insulator boundaries; silicon; SOI bulk-like technology; SRAM; bulk design rules; charge collection; heavy ion sensitivity; incident ion; oblique incidence; parasitic bipolar; CMOS process; CMOS technology; Circuits; Inverters; Isolation technology; Numerical simulation; Random access memory; Semiconductor device modeling; Silicon; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location
St. Malo
Print_ISBN
0-7803-1793-9
Type
conf
DOI
10.1109/RADECS.1993.316518
Filename
316518
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