Title :
High Power and High Efficiency GaAs FETs in C Band
Author :
Sakamoto, S. ; Sonoda, T. ; Ikeda, Y. ; Kasai, N. ; Sakayori, T. ; Igi, S. ; Yamanouchi, M. ; Takamiya, S. ; Kashimoto, Y.
Author_Institution :
Kita-itami works, Mitsubishi Electric Corporation, Hyogo, Japan
Abstract :
An internally matched high power and high efficiency GaAs FET combined with four FET chips has been developed with an output power of 20 W (PldB) and 39% power-added efficiency around 4 GHz. This excellent result was achieved mainly by the introduction of the stepped gate recess combined with the refractory metal Schottky contact which can increase simultaneously the breakdown voltage and maximum channel current.
Keywords :
Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Optical refraction; Power generation; Radio frequency; Schottky barriers; Solid state circuits; Thermal resistance;
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
DOI :
10.1109/EUMA.1989.334165
