SEU parameters and proton-induced upsets

Author

Beauvais, W.J. ; McNulty, P.J. ; Kader, W. G Abdel ; Reed, R.A.

Author_Institution

Dept. of Phys. & Astron., Clemson Univ., SC, USA

fYear

1993

fDate

13-16 Sep 1993

Firstpage

540

Lastpage

545

Abstract

The variation of SEU cross section with incident proton energy and angle of incidence is very sensitive to the thickness of the sensitive volume and the critical charge required for upset. This paper provides a method to determine accurate estimates of these important parameters, the critical charge and the sensitive volume thickness, using simple SEU measurements for a number incident proton energies

Keywords

SRAM chips; bipolar integrated circuits; circuit reliability; integrated circuit testing; proton effects; SEU cross section; SEU parameters; accurate estimates; angle of incidence; bipolar SRAM; critical charge; incident proton energies; incident proton energy; proton-induced upsets; sensitive volume; sensitive volume thickness; simple SEU measurements; single event upsets; Area measurement; Charge measurement; Circuits; Current measurement; Physics; Protons; Random access memory; Semiconductor device measurement; Single event upset; Volume measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316522

Filename

316522

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2003231