Title :
SEU parameters and proton-induced upsets
Author :
Beauvais, W.J. ; McNulty, P.J. ; Kader, W. G Abdel ; Reed, R.A.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
Abstract :
The variation of SEU cross section with incident proton energy and angle of incidence is very sensitive to the thickness of the sensitive volume and the critical charge required for upset. This paper provides a method to determine accurate estimates of these important parameters, the critical charge and the sensitive volume thickness, using simple SEU measurements for a number incident proton energies
Keywords :
SRAM chips; bipolar integrated circuits; circuit reliability; integrated circuit testing; proton effects; SEU cross section; SEU parameters; accurate estimates; angle of incidence; bipolar SRAM; critical charge; incident proton energies; incident proton energy; proton-induced upsets; sensitive volume; sensitive volume thickness; simple SEU measurements; single event upsets; Area measurement; Charge measurement; Circuits; Current measurement; Physics; Protons; Random access memory; Semiconductor device measurement; Single event upset; Volume measurement;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316522
