Title :
The effects of ion track structure in simulating single event phenomena
Author :
Dussault, H. ; Howard, J.W., Jr. ; Block, R.C. ; Pinto, M.R. ; Stapor, W.J. ; Knudson, A.R.
Author_Institution :
Dept. of Nucl. Eng. & Eng. Phys., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This paper describes a first order model for simulating single event phenomena using a three-dimensional device simulator. The importance of track structure effects and linear energy transfer (LET) in determining device transient current and charge collection is demonstrated
Keywords :
ion beam effects; radiation hardening (electronics); semiconductor device models; semiconductor diodes; simulation; transients; 3D device simulator; LET; charge collection; device transient current; first order model; ion track structure; linear energy transfer; single event phenomena; track structure effects; Analytical models; Computational modeling; Computer simulation; Discrete event simulation; Laboratories; Semiconductor materials; Semiconductor process modeling; Solid modeling; Testing; Transient analysis;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316524
