Radiation testing of flight lots for MARS-94 covering-semiconductor types as 4 M-BIT DRAM, 256 K-BIT SRAM, 256 K-BIT EEPROM and a 53C90 SCSI controller

Author

Harboe-Sorensen, R. ; Vuilleumier, P. ; Adams, L. ; Nickson, B. ; Muller, R.

Author_Institution

Eur. Space Agency/ESTEC, Noordwijk, Netherlands

fYear

1993

fDate

13-16 Sep 1993

Firstpage

490

Lastpage

498

Abstract

The MARS-94 mass memory unit (MMU) uses many new and advanced digital semiconductor components for which there is no radiation data available. This paper reports on a radiation programme covering total ionising dose (TID) and single event effects (SEE) testing of devices from flight and back-up lots. Expected in-orbit upset rates, based on these ground tests and the CREME suite of programs, are calculated for this mission

Keywords

CMOS integrated circuits; DRAM chips; EPROM; SRAM chips; aerospace testing; gamma-ray effects; integrated circuit testing; microcontrollers; peripheral interfaces; radiation hardening (electronics); 256 K-BIT EEPROM; 256 K-BIT SRAM; 256 kbit; 4 M-BIT DRAM; 4 Mbit; 53C90 SCSI controller; CMOS devices; CREME program suite; MARS-94; MARS-94 mass memory unit; back-up lots; digital semiconductor components; flight lots; ground tests; in-orbit upset rates; radiation data; radiation programme; radiation testing; semiconductor types; single event effects; total ionising dose; CMOS process; Computer aided software engineering; EPROM; Instruments; Ionizing radiation; Manufacturing processes; Planets; Random access memory; Single event upset; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316525

Filename

316525