Title :
Single ion induced multiple-bit upset in IDT 256K SRAMs
Author :
Koga, R. ; Crawford, Kb ; Grant, P.B. ; Kolasinski, W.A. ; Leung, D.L. ; Lie, T.J. ; Mayer, D.C. ; Pinkerton, S.D. ; Tsubota, T.K.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
The occurrence of single ion induced multiple-bit upset in IDT71256 256K SRAMs was investigated using high energy heavy ions, with special attention to upsets affecting bits within the same logical memory word
Keywords :
SRAM chips; ion beam effects; logic testing; radiation hardening (electronics); 256 kbit; IDT 256K SRAMs; IDT71256 256K SRAMs; high energy heavy ions; logical memory word; single ion induced multiple-bit upset; Circuits; Error correction; Hardware; History; Millimeter wave devices; Particle tracking; Random access memory; SRAM chips; Single event upset; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316526
