Title :
Protons and heavy ions induced stuck bits on large capacity RAMs
Author :
Duzellier, S. ; Falguère, D. ; Ecoffet, R.
Author_Institution :
Dept. d´´Etudes et de Recherche en Technol. Spatiale, ONERA-CERT, Toulouse, France
Abstract :
A semi-permanent imprint effect has been observed, on large capacity memories (static and dynamic), during heavy ion and proton irradiations. The experimental circumstances of stuck bits occurrence are described and the influence of irradiation conditions discussed. A total dose testing completed the investigation
Keywords :
DRAM chips; SRAM chips; integrated circuit testing; ion beam effects; proton effects; DRAMs; SRAMs; heavy ion induced stuck bits; irradiation conditions; large capacity RAMs; proton induced stuck bits; semi-permanent imprint effect; stuck bits occurrence; total dose testing; Aluminum; Circuit testing; Degradation; Microprocessors; Particle beam measurements; Protons; Random access memory; Read-write memory; Temperature; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316527
