Title :
Power MOSFET transistors hardening: way to proceed and characterization
Author :
Vadrot, J.F. ; Briand, P. ; Noc, E. Le ; Gaudin, D. ; Tastet, P. ; Garnier, J. ; Roubaud, F.
Author_Institution :
SGS-Thomson Microelectron., Rennes, France
Abstract :
After the characterization of different SGS-THOMSON Power MOSFET technologies, some process parameters improving their behaviour under heavy ions and Co60 were selected and applied to a test vehicle for a complete characterization
Keywords :
gamma-ray effects; insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); semiconductor device testing; semiconductor technology; Co; Co60 irradiation; SGS-THOMSON; heavy ions; power MOSFET transistors; process parameters; radiation hardening; test vehicle; Low voltage; MOSFET circuits; Medium voltage; Microelectronics; Performance evaluation; Power MOSFET; Switches; Testing; Threshold voltage; Vehicles;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316528
