The temperature depedence of quantum optical transition properties of GaN and GaAs in a infinite square well potential system

Author

Lee, S.H. ; Sug, J.Y. ; Choi, J.Y. ; Sa-Gong, G. ; Lee, J.T.

Author_Institution

Dept. of the Electr. Eng., Donga Univ., Busan, South Korea

fYear

2009

fDate

20-23 Sept. 2009

Firstpage

1620

Lastpage

1623

Abstract

We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in GaN and GaAs. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process.

Keywords

III-V semiconductors; Landau levels; absorption; emission; gallium arsenide; gallium compounds; phonons; wide band gap semiconductors; 2-dimensional Landau splitting system; GaAs; GaN; Liouville equation; electron confinement; equilibrium average projection scheme; infinite square well potential system; phonon absorption transition; phonon emission transition; quantum optical transition properties; quantum transport theory; square well confinement potential; temperature dependence; Electron optics; Equations; Gallium arsenide; Gallium nitride; Magnetic confinement; Phonons; Potential well; Protection switching; Quantum mechanics; Temperature; GaN and GaAs; cyclotron resonance; electron phonon coupling system; equilibrium average projection scheme (EAPS); quantum transport theory; response formula and the scattering factor formula; the quantum transition line shapes(QTLS) and the quantum transition line widths(QTLW);

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2009 IEEE International

Conference_Location

Rome

ISSN

1948-5719

Print_ISBN

978-1-4244-4389-5

Electronic_ISBN

1948-5719

Type

conf

DOI

10.1109/ULTSYM.2009.5441960

Filename

5441960