Title :
Neutron radiation effects in HEMTs
Author :
Papaioannou, G.J. ; Papastamatiou, M. ; Arpatzanis, N. ; Dimitrakis, P. ; Papastergiou, C.
Author_Institution :
Solid State Phys. Section, Athens Univ., Greece
Abstract :
HEMTs have been irradiated with fast neutrons at fluences up to 10 16n/cm2. At large enough fluences the two dimensional electron gas vanishes and the devices turn into AlGaAs MESFETs. The majority carrier traps responsible for the degradation have been investigated. A charge control model has been introduced to simulate the shift of the threshold voltage and to determine the carrier removal rate in the AlGaAs donor layer
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium arsenide; high electron mobility transistors; neutron effects; semiconductor device testing; two-dimensional electron gas; 2D electron gas; AlGaAs; AlGaAs MESFETs; AlGaAs donor layer; DLTS; HEMTs; carrier removal rate; charge control model; degradation; fast neutrons; fluences; irradiated; majority carrier traps; neutron radiation effects; threshold voltage; Degradation; Electron traps; Gallium arsenide; HEMTs; Integrated circuit noise; MESFETs; MODFETs; Microwave devices; Neutron radiation effects; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316539
