• DocumentCode
    2003775
  • Title

    Step Response and very Large-Signal Modeling of FETS at Picosecond Scales

  • Author

    Ouslimani, A. ; Vemet, G. ; Adde, R.

  • Author_Institution
    Institut d´´Electronique Fondamentale, URA22, Associée au CNRS, Université Paris-Sud,91405 Orsay, France.
  • fYear
    1989
  • fDate
    4-7 Sept. 1989
  • Firstpage
    380
  • Lastpage
    385
  • Abstract
    The step response of fast FETs is measured and simulated. A very large signal model is used where non linear parameters are described with 2D-look-up numerical tables versus device internal voltages. Full dc and microwave FET characterization and high precision parameter extraction determines completely the tables of parameters. The measured step response of NEC710 (38+4ps) is simulated accurately including the device measurement environment. The intrinsic switching time of the NEC710 is 20+ 4ps showing that modeling, n1easurement and simulation is adequate to study picosecond transient phenomena in single transistors.
  • Keywords
    Circuit simulation; Equivalent circuits; Intrusion detection; MESFETs; Microwave FETs; Parameter extraction; Resonance; Time factors; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1989. 19th European
  • Conference_Location
    London, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1989.333993
  • Filename
    4132712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2003775