Step Response and very Large-Signal Modeling of FETS at Picosecond Scales

The step response of fast FETs is measured and simulated. A very large signal model is used where non linear parameters are described with 2D-look-up numerical tables versus device internal voltages. Full dc and microwave FET characterization and high precision parameter extraction determines completely the tables of parameters. The measured step response of NEC710 (38+4ps) is simulated accurately including the device measurement environment. The intrinsic switching time of the NEC710 is 20+ 4ps showing that modeling, n1easurement and simulation is adequate to study picosecond transient phenomena in single transistors.