DocumentCode
2003785
Title
Nuclear evaluation of PZT thin films for non volatile memories
Author
Verbeck, C. ; Gaucher, P.
Author_Institution
Thomson-CSF, Bagneux, France
fYear
1993
fDate
13-16 Sep 1993
Firstpage
166
Lastpage
173
Abstract
Total dose, dose rate and neutron tests have been performed on PZT thin films made by a sol-gel process. The possibility of using these ferroelectric capacitors for radiation hardened ferroelectric memories is demonstrated
Keywords
ferroelectric storage; ferroelectric thin films; lead compounds; neutron effects; piezoelectric materials; radiation hardening (electronics); sol-gel processing; PZT; PZT thin films; PbZrO3TiO3; dose rate; ferroelectric capacitors; neutron tests; nonvolatile memories; radiation hardened ferroelectric memories; sol-gel process; total dose; Capacitors; Circuit testing; Dielectric loss measurement; Dielectric thin films; Electrodes; Ferroelectric materials; Hysteresis; Polarization; Transistors; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location
St. Malo
Print_ISBN
0-7803-1793-9
Type
conf
DOI
10.1109/RADECS.1993.316541
Filename
316541
Link To Document