Title :
Electron transport and impact ionization in SiO2
Author :
Bradford, J.N. ; Woolf, S.
Author_Institution :
PL-VTER, USAF Philips Lab., Hanscom AFB, MA, USA
Abstract :
Ionizing collisions occurring in low energy (E⩾Egap) electron transport in SiO2 must be considered in floating gate technologies modeling and descriptions of Si/SiO2 interface degradation. Underlying theories disagree and result in uncertain predictions of impact ionization. Development of a model for scattering in SiO2 of electrons in the energy range ~5-60 eV that can adequately describe the transition from the electron-phonon interaction to coulomb field scattering has not yet been accomplished. Two considerations which have impeded this effort are: (a) potential asymmetry for single electron scatter by the SiO2 unit cell; and (b) uncertainty of appropriate values for the SiO2 deformation potential and first Brillouin zone boundary energy
Keywords :
Brillouin zones; electron-phonon interactions; elemental semiconductors; impact ionisation; metal-insulator-semiconductor devices; radiation effects; semiconductor-insulator boundaries; silicon; silicon compounds; 5 to 60 eV; Si-SiO2; Si/SiO2 interface degradation; coulomb field scattering; deformation potential; electron-phonon interaction; first Brillouin zone boundary energy; floating gate technologies; impact ionization; ionizing collisions; low energy electron transport; potential asymmetry; Acoustic scattering; Brillouin scattering; Crystallization; Degradation; Electron optics; Impact ionization; Optical losses; Optical saturation; Optical scattering; Phonons;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316542
