Electron transport and impact ionization in SiO2

Ionizing collisions occurring in low energy (E⩾E_gap) electron transport in SiO₂ must be considered in floating gate technologies modeling and descriptions of Si/SiO₂ interface degradation. Underlying theories disagree and result in uncertain predictions of impact ionization. Development of a model for scattering in SiO₂ of electrons in the energy range ~5-60 eV that can adequately describe the transition from the electron-phonon interaction to coulomb field scattering has not yet been accomplished. Two considerations which have impeded this effort are: (a) potential asymmetry for single electron scatter by the SiO₂ unit cell; and (b) uncertainty of appropriate values for the SiO₂ deformation potential and first Brillouin zone boundary energy