Title :
A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process
Author :
Alavi, M. ; Bohr, M. ; Hicks, J. ; Denham, M. ; Cassens, A. ; Douglas, D. ; Tsai, M.-C.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
A novel programmable element has been developed and evaluated for state of the art CMOS processes. This element is based on agglomeration of the Ti-silicide layer on top of poly fuses. Various aspects of this programmable device including characterization and optimization of physical and electrical aspects of the element, programming yield, and reliability have been studied. Development of a novel programming and sensing circuit is also included.
Keywords :
CMOS logic circuits; CMOS memory circuits; PLD programming; PROM; circuit optimisation; electric fuses; integrated circuit reliability; CMOS logic process; PROM element; Ti-silicide layer; TiSi/sub 2/-Si; poly fuses; programmable element; programming circuit; programming yield; reliability; salicide agglomeration; sensing circuit; CMOS logic circuits; CMOS process; CMOS technology; Electric resistance; Fuses; PROM; Passivation; Programmable logic arrays; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650515
