DocumentCode
2004034
Title
Performance and Simulation of a High Voltage 2W X-Band Monolithic Amplifier
Author
white, Paul M. ; Curtice, Walter R. ; Chang, Wayne ; McGinn, William
Author_Institution
Raytheon Company, Equipment Division, Laboratories, 430 Boston Post Road, Wayland, MA 01778, USA.
fYear
1989
fDate
4-7 Sept. 1989
Firstpage
445
Lastpage
450
Abstract
An X-Band power MMIC chip designed for high voltage operation in phased array applications is described. A 10GHz pulsed power output of 2.2W with 10dB associated gain was achieved at an optimum drain bias of 12.5V in the first design iteration. CW performance over 8.0-10.5 GHz was accurately simulated using large signal FET models incorporated into a harmonic balance analysis. The chip is based on high breakdown double-recessed FET technology and is suitable for high yield volume production.
Keywords
Analytical models; Electric breakdown; FETs; Harmonic analysis; MMICs; Performance analysis; Phased arrays; Pulse amplifiers; Signal analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1989. 19th European
Conference_Location
London, UK
Type
conf
DOI
10.1109/EUMA.1989.334003
Filename
4132722
Link To Document