Title :
Measuring 1 MeV (Si) equivalent neutron fluences with PIN silicon diodes
Author :
Morin, J. ; Arnoud, J.C. ; David, J. ; Zyromski, P.
Author_Institution :
CEA, Is-sur-Tille, France
Abstract :
Damages created in a PIN diode by fast neutrons are evaluated by measuring the variation of the resistivity of the diode under a given current. Calibrations are performed with different neutron sources. Neutron fluences are measured by diode voltage
Keywords :
calibration; elemental semiconductors; neutron effects; p-i-n diodes; semiconductor device testing; silicon; 1 MeV; PIN silicon diodes; Si; calibration; diode voltage; equivalent neutron fluences; fast neutrons; neutron sources; resistivity variation; Calibration; Conductivity; Current measurement; Diodes; Inductors; Manufacturing; Neutrons; Pulse measurements; Silicon; Voltage measurement;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316557
